| 1 | Negative transconductance and negative differential resistance in asymmetric narrow bandgap 2D–3D heterostructures | Nanoscale, 2019 | SCI | 1 |
| 2 | Black phosphorus radio frequency electronics at cryogenic temperatures | Advanced Electronic Materials, 2018 | SCI | 1 |
| 3 | High field transport of high performance black phosphorus transistors | Applied Physics Letters, 2017 | SCI | 1 |
| 4 | Low frequency 1/f noise in graphene FETs | ICSICT, 2014 | EI | 1 |
| 5 | Highly anisotropic Sb2Se3 nanosheets: gentle exfoliation from the bulk precursors possessing 1D crystal structure | Advanced Materials, 2017 | SCI | 2 |
| 6 | Tunable Low-Frequency Noise in Dual-Gate MoS2 Transistors | IEEE Electron Device Letters, 2018 | SCI | 2 |
| 7 | A transverse tunnelling field-effect transistor made from a van der Waals heterostructure | Nature Electronics, 2020 | SCI | 其它 |
| 8 | Nanometre-thin Indium Tin Oxide for Advanced High-Performance Electronics | Nature Materials, 2019 | SCI | 其它 |
| 9 | High-speed Black Phosphorus Field-Effect Transistors Approaching Ballistic Limit | Science Advances, 2019 | SCI | 其它 |
| 10 | Channel engineering of normally-off AlGaN/GaN MOS-HEMTs by atomic layer etching and high-k dielectric | IEEE Electron Device Letters, 2018 | SCI | 其它 |
| 11 | Improved Current Collapse in Recessed AlGaN/GaN MOS-HEMTs by Interface and Structure Engineering | IEEE Transactions on Electron Devices, 2019 | SCI | 其它 |