| 1 | Nitrogen-doped Ga2O3 current blocking layer using MOCVD homoepitaxy for high-voltage and low-leakage Ga2O3 vertical device fabrication | Applied Physics Letters, 2024, 125(20) | SCI期刊 | 通讯 |
| 2 | Ga₂O₃ Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction | IEEE Transactions on Electron Devices, 2024, 71(4): 2530-2535 | SCI期刊 | 通讯 |
| 3 | Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination | Applied Physics Letters, 2024, 125(2) | SCI期刊 | 通讯 |
| 4 | Highly textured CMOS-compatible hexagonal boron nitride-based neuristor for reservoir computing | Chemical Engineering Journal, 2024, 498: 155651. | 顶级期刊 | 1 |
| 5 | Implementation of high thermal conductivity and synaptic metaplasticity in vertically-aligned hexagonal boron nitride-based memristor | Science China Materials, 2024: 1-8 | 顶级期刊 | 1 |
| 6 | Theoretical prediction on the stability, elastic, electronic and optical properties of MAB-phase M 4 AlB 4 compounds (M= Cr, Mo, W) | RSC advances, 2024, 14(2): 1186-1194. | SCI期刊 | 通讯 |
| 7 | Anisotropic dielectric dispersions and thermal behaviors in highly textured BN thin films for heat self-dissipating electronics | Vacuum, 2024, 225: 113207 | SCI期刊 | 通讯 |
| 8 | InP Quantum Dots Tailored Oxide Thin Film Phototransistor for Bioinspired Visual Adaptation | Adv. Funct. Mater. 2023, 2305959 | 顶级期刊 | 通讯 |
| 9 | In-sensor computing realization using fully CMOS-compatible TiN/HfOx-based neuristor array | ACS Sensors 2023 | 顶级期刊 | 1 |
| 10 | A neuromorphic bionic eye with broadband vision and biocompatibility using TIPS-pentacene-based phototransistor array retina | Applied Materials Today，2023, 33: 101885 | 卓越期刊 | 1 |
| 11 | Thermal boundary resistance and thermal rectification in VACNT arrays integrated with SnZn alloys | Journal of Alloys and Compounds, 2023, 969: 172480. | SCI期刊 | 通讯 |
| 12 | Second harmonic generation in gallium phosphide nano-waveguides | Optics Express, 2021, 29 (7): 10307-10320 | SCI | 1 |
| 13 | Generation of even and odd high harmonics in resonant metasurfaces using single and multiple ultra-intense laser pulses | Nature Communications, 2021, 12 (1): 1-6 | SCI | 2 |
| 14 | Continuous Wave Second Harmonic Generation Enabled by Quasi-Bound-States in the Continuum on Gallium Phosphide Metasurfaces | Nano Letters, 2020, 20 (12): 8745-8751 | SCI | 1 |
| 15 | Efficient Ultrafast All-Optical Modulation in a Nonlinear Crystalline Gallium Phosphide Nanodisk at the Anapole Excitation | Science Advances, 2020, 6 (34): eabb3123 | SCI | 2 |
| 16 | Realization of Self-compliance Resistive Switching Memory via Tailoring Interfacial Oxygen | ACS Applied Materials & Interfaces, 2019, 11 (44): 41490-41496 | SCI | 通讯 |
| 17 | Implementation of Simple but Powerful Trilayer Oxide-Based Artificial Synapses with Tailored Bio-Synapse-Like Structures | ACS Applied Materials & Interfaces, 2019, 12 (1): 1036-1045 | SCI | 通讯 |
| 18 | Enlarged read window in the asymmetric ITO/HfOx/TiN complementary resistive switch | Applied Physics Letters, 2017, 111 (4): 043501 | SCI | 1 |
| 19 | Observation of Self-Reset During Forming of the TiN/HfOx/TiN Resistive Switching Device | IEEE Electron Device Letters, 2016, 37 (9): 1116-1119 | SCI | 1 |
| 20 | Enhanced stability of complementary resistance switching in the TiN/HfOx/TiN resistive random access memory device via interface engineering | Applied Physics Letters, 2016, 108 (8): 083505. | SCI | 1 |
| 21 | Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device | Applied Physics Letters, 2014, 105 (22): 222106 | SCI | 1 |