| 1 | Gallium‐Based Semiconductor Integrated Circuits: Past, Present, and Future for Emerging Optoelectronic Devices | Advanced Functional Materials, 2026, e27869 | SCI期刊 | 通讯 |
| 2 | β-Ga2O3 Vertical U-Trench MOSFET With Nitrogen-Doped Current Blocking Layer Grown via Ex Situ and In Situ MOCVD Epitaxy | IEEE Electron Device Letters, 2026, 47(1): 45-48 | SCI期刊 | 通讯 |
| 3 | Achieving high carrier concentration β-Ga2O3 epilayers via MOCVD using SiCl4 as dopant | Applied Physics Letters, 2026, 128(2): 022106 | SCI期刊 | 通讯 |
| 4 | Achievement of High‐Quality Gallium Oxide Epitaxial Growth via Machine Learning | Advanced Functional Materials, 2025 | 顶级期刊 | 通讯 |
| 5 | Ultrahigh-Performance Photovoltaic Ga2O3 Solar-Blind Ultraviolet Detectors via Two-Dimensional Step-Flow Growth and Drift Region Optimization | ACS Applied Materials & Interfaces, 2025 | SCI期刊 | 通讯 |
| 6 | In situ nitrogen doping of β-Ga2O3 during MOCVD homoepitaxy: A theoretical and experimental study | Applied Physics Letters, 2025 | SCI期刊 | 通讯 |
| 7 | Insight into the High Hole Concentration of p-Type Ga2O3 via In Situ Nitrogen Doping | The Journal of Physical Chemistry Letters, 2025, 16(17): 4243-4251. | SCI期刊 | 通讯 |
| 8 | Surface Quality Improvement Mechanism of ICP Etching for Ga2O3 Schottky Barrier Diode | Micro and Nanostructures, 2025, 199: 208073 | SCI期刊 | 通讯 |
| 9 | Nitrogen-doped Ga2O3 current blocking layer using MOCVD homoepitaxy for high-voltage and low-leakage Ga2O3 vertical device fabrication | Applied Physics Letters, 2024, 125(20) | SCI期刊 | 通讯 |
| 10 | Ga₂O₃ Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction | IEEE Transactions on Electron Devices, 2024, 71(4): 2530-2535 | SCI期刊 | 通讯 |