张海忠
教授
教授||博士生导师||“闽江学者奖励计划”特聘教授||新加坡南洋理工大学微电子专业博士学位
||Email: haizhong_zhang@fzu.edu.cn
国家级重大人才计划青年项目入选者,福建省“百人计划”项目入选者,海外高层次留学人才回国资助项目获得者,曾任中芯国际集成电路制造(上海)有限公司高级工艺整合工程师,香港城市大学助理研究员,新加坡南洋理工大学副研究员,新加坡科研局研究科学家,具有丰富的科研和企业工作经历。主要从事第四代氧化镓化合物半导体材料生长、功率器件与紫外探测器件设计、制备、器件热管理及可靠性等方面的研究。在Science Advances,Nature Communications,Nano Letters,IEEE Electron Device Letters,Applied Materials & Interfaces, Applied Physics Letters等国际权威SCI杂志上共发表论文40余篇,申请中国专利25项。主持或参与主持多项科技重大项目。

主要研究领域:
1、宽禁带化合物半导体材料外延生长
2、高压低损耗功率器件设计与开发
3、紫外光电探测器件设计与开发
4、半导体器件热管理与可靠性

欢迎有志于在上述相关研究领域开展科研活动的硕士、博士研究生、博士后加入本课题组,课题组可以提供与国内外一些高校联合培养的机会。
 
 
学术及社会兼职(Academic and social work)  
1工信部集成电路领域知识产权鉴定专家
2福建省射频与功率芯片制造工程研究中心外聘专家
3集成电路知识产权联盟专家委员会专家委员
42022年全球青年科技创新论坛专家委员会专家委员
5福建省微电子领域智库专家
6福州市人才促进会海外专委会秘书长
7美国电气和电子工程师协会(IEEE)会员;
8新加坡物理研究协会(Institute of Physics Singapore)终身会员;
9福建省国际人才交流协会理事
10晋江博士协会副会长
 
科研项目(Research project)  
12022HZ027006应用于高功率器件的大尺寸高质量氧化镓材料关键技术研发及产业化500万福建省科技厅2022-20251福建省科技重大专项
22022GZ04掺硅高品质GaN衬底关键加工技术200万泉州市科技局2022-20251“揭榜挂帅”科技重大专项(高新工业领域)
3闽人社 【2020】738 号“闽江学者奖 励计划”项目100万元福建省人力资源和社会保障厅2022-2025独立撰编写福建省高层次人才项目
42023人社部高层次留学回国人才项目60万元人力资源和社会保障部2023独立撰编写海外高层次人才项目
52023H6030通用型光耦隔离式栅极驱动芯片关键技术及产业化60万元福建省科技厅2023-20262高校产学合作项目、课题负责人
 
科技论著(Scientific treatise)  
1Insight into the High Hole Concentration of p-Type Ga2O3 via In Situ Nitrogen DopingThe Journal of Physical Chemistry Letters, 2025, 16(17): 4243-4251.SCI期刊通讯
2Nitrogen-doped Ga2O3 current blocking layer using MOCVD homoepitaxy for high-voltage and low-leakage Ga2O3 vertical device fabricationApplied Physics Letters, 2024, 125(20)SCI期刊通讯
3Ga₂O₃ Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss ConductionIEEE Transactions on Electron Devices, 2024, 71(4): 2530-2535SCI期刊通讯
4Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa terminationApplied Physics Letters, 2024, 125(2)SCI期刊通讯
5Highly textured CMOS-compatible hexagonal boron nitride-based neuristor for reservoir computingChemical Engineering Journal, 2024, 498: 155651.顶级期刊1
6 Implementation of high thermal conductivity and synaptic metaplasticity in vertically-aligned hexagonal boron nitride-based memristorScience China Materials, 2024: 1-8顶级期刊1
7InP Quantum Dots Tailored Oxide Thin Film Phototransistor for Bioinspired Visual AdaptationAdv. Funct. Mater. 2023, 2305959顶级期刊通讯
8In-sensor computing realization using fully CMOS-compatible TiN/HfOx-based neuristor arrayACS Sensors 2023顶级期刊1
9A neuromorphic bionic eye with broadband vision and biocompatibility using TIPS-pentacene-based phototransistor array retinaApplied Materials Today,2023, 33: 101885卓越期刊1
10Thermal boundary resistance and thermal rectification in VACNT arrays integrated with SnZn alloysJournal of Alloys and Compounds, 2023, 969: 172480.SCI期刊通讯
11Second harmonic generation in gallium phosphide nano-waveguidesOptics Express, 2021, 29 (7): 10307-10320SCI1
12Generation of even and odd high harmonics in resonant metasurfaces using single and multiple ultra-intense laser pulsesNature Communications, 2021, 12 (1): 1-6SCI2
13Continuous Wave Second Harmonic Generation Enabled by Quasi-Bound-States in the Continuum on Gallium Phosphide Metasurfaces Nano Letters, 2020, 20 (12): 8745-8751SCI1
14Efficient Ultrafast All-Optical Modulation in a Nonlinear Crystalline Gallium Phosphide Nanodisk at the Anapole ExcitationScience Advances, 2020, 6 (34): eabb3123SCI2
15Realization of Self-compliance Resistive Switching Memory via Tailoring Interfacial OxygenACS Applied Materials & Interfaces, 2019, 11 (44): 41490-41496SCI通讯
16Implementation of Simple but Powerful Trilayer Oxide-Based Artificial Synapses with Tailored Bio-Synapse-Like StructuresACS Applied Materials & Interfaces, 2019, 12 (1): 1036-1045SCI通讯
17Enlarged read window in the asymmetric ITO/HfOx/TiN complementary resistive switchApplied Physics Letters, 2017, 111 (4): 043501SCI1
18Observation of Self-Reset During Forming of the TiN/HfOx/TiN Resistive Switching DeviceIEEE Electron Device Letters, 2016, 37 (9): 1116-1119SCI1
19Enhanced stability of complementary resistance switching in the TiN/HfOx/TiN resistive random access memory device via interface engineeringApplied Physics Letters, 2016, 108 (8): 083505.SCI1
20Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory deviceApplied Physics Letters, 2014, 105 (22): 222106SCI1