1 | Nitrogen-doped Ga2O3 current blocking layer using MOCVD homoepitaxy for high-voltage and low-leakage Ga2O3 vertical device fabrication | Applied Physics Letters 2024 | 卓越期刊 | 1 |
2 | Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination | Applied Physics Letters 2024 | 卓越期刊 | 1 |
3 | Demonstration of Surface Treatment for β-Ga2O3 Schottky Barrier Diode with High Breakdown Voltage and Low Specific On-Resistance | IEEE ISPSD 2024 | EI会议 | 1 |
4 | Ga2O3 Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction | IEEE Transactions on Electron Devices 2024 | 卓越期刊 | 1 |
5 | A Novel Solid-State Circuit Breaker With Robust Breaking Capability and High Efficiency | IEEE Transactions on Power Electronics 2023 | 卓越期刊 | 其它 |
6 | Numerical Analysis for a P- Drift Region N-IGBT With Enhanced Dynamic Electric Field Modulation Effect | IEEE Transactions on Electron Devices 2022 | 卓越期刊 | 1 |
7 | A Novel Thyristor-Based Bidirectional SSCB With Controllable Current Breaking Capability | IEEE Transactions on Power Electronics 2022 | 卓越期刊 | 1 |
8 | Design of a Reliable Bidirectional Solid-State Circuit Breaker for DC Microgrids | IEEE Transactions on Power Electronics 2022 | 卓越期刊 | 通讯 |
9 | Design of an Isolated Circuit Breaker With Robust Interruption Capability for DC Microgrid Protection | IEEE Transactions on Industrial Electronics 2021 | 顶级期刊 | 1 |
10 | An Efficient and Reliable Solid- State Circuit Breaker Based on Mixture Device | IEEE Transactions on Power Electronics 2021 | 卓越期刊 | 1 |
11 | Design and Experimental Verification of an Efficient SSCB Based on CS-MCT | IEEE Transactions on Power Electronics 2020 | 卓越期刊 | 1 |
12 | An Ultralow Loss N-channel RB-IGBT with P-drift Region | IEEE ISPSD 2020 | EI会议 | 1 |
13 | A Novel IGBT With Self- Regulated Potential for Extreme Low EMI Noise | IEEE Electron Device Letters 2019 | 卓越期刊 | 1 |
14 | An Ultralow Loss Insulated Gate Bipolar Transistor With Emitter Dual Injection | IEEE Transactions on Electron Devices 2019 | 卓越期刊 | 2 |
15 | A Novel CSTBT with Hole Barrier for High dV/dt Controllability and Low EMI Noise | IEEE ISPSD 2019 | EI会议 | 1 |
16 | Gate Field Plate IGBT With Trench Accumulation Layer for Extreme Injection Enhancement | Superlattices and Microstructures 2017 | SCI期刊 | 1 |